Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu₃Ti₄O₁₂ Grown by Pulsed-laser Deposition

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Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu₃Ti₄O₁₂ on LaAlO₃ and SrTiO₃ substrates with or without various conducting buffer layers. The latter include YBa₂Cu₃O₇, La₁.₈₅Sr₀.₁₅CuO₄₊δ and LaNiO₃. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.