المساق
arXiv 2002-05-08 DOI 10.1063/1.1506951 1 مشاهدة

Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu₃Ti₄O₁₂ Grown by Pulsed-laser Deposition

Si, W. · Cruz, E. M. · Johnson, P. D. · Barnes, P. W. · Woodward, P. · Ramirez, A. P.

الأصل · EN

Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu₃Ti₄O₁₂ on LaAlO₃ and SrTiO₃ substrates with or without various conducting buffer layers. The latter include YBa₂Cu₃O₇, La₁.₈₅Sr₀.₁₅CuO₄₊δ and LaNiO₃. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.

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