Band alignments of electronic energy structure in epitaxially grown eta-Ga2O3 layers
Zatsepin, D. A. · Boukhvalov, D. W. · Zatsepin, A. F. · Kuznetsova, Yu. A. · Gogova, D. · Shur, V. Ya. · Esin, A. A.
Original · EN
Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calculations.
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