Epitaxial aluminum contacts to InAs nanowires
Ziino, N. L. B. · Krogstrup, P. · Madsen, M. H. · Johnson, E. · Wagner, J. B. · Marcus, C. M. · Nygård, J. · Jespersen, T. S.
Original · EN
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.
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