Evidence of a pressure-induced metallization process in monoclinic VO₂
Arcangeletti, E. · Baldassarre, L. · Di Castro, D. · Lupi, S. · Malavasi, L. · Marini, C. · Perucchi, A. · Postorino, P.
Original · EN
Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO₂ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P* 10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P>P*. Differently from ambient pressure, where the VO₂ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO₂.
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