Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study
Devidas, T. R. · Amaladass, E. P. · Sharma, Shilpam · Rajaraman, R. · Sornadurai, D. · Subramanian, N. · Mani, Awadhesh · Sundar, C. S. · Bharathi, A.
Original · EN
Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.
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