Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.

doi:10.1063/1.3276560

arXiv 2009-10-21 DOI 10.1063/1.3276560 0 views

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Weingart, S. · Bock, C. · Kunze, U. · Speck, F. · Seyller, Th. · Ley, L.

Mesoscale and Nanoscale Physics Materials Science Other Condensed Matter

Original · EN

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

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