Highly resistive epitaxial Mg-doped GdN thin films
Lee, C. -M. · Warring, H. · Vézian, S. · Damilano, B. · Granville, S. · Khalfioui, M. Al · Cordier, Y. · Trodahl, H. J. · Ruck, B. J. · Natali, F.
Original · EN
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].
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