Carbon Irradiated SI-GaAs for Photoconductive THz Detection
Singh, Abhishek · Pal, Sanjoy · Surdi, Harshad · Prabhu, S. S. · S., Mathimalar · Nanal, Vandana · Pillay, R. G. · Dohler, G. H.
Original · EN
We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from 1012 /cm2 to 1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.
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