Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3

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Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K) 400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K) 20 μV/K). Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.