Fe implanted ferromagnetic ZnO
Potzger, K. · Zhou, Shengqiang · Reuther, H. · Muecklich, A. · Eichhorn, F. · Schell, N. · Skorupa, W. · Helm, M. · Fassbender, J. · Herrmannsdoerfer, T. · Papageorgiou, T. P.
Original · EN
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10¹6 cm-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10¹5 cm-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
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