Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO
Eid, K. F. · Stone, M. B. · Maksimov, O. · Shih, T. C. · Ku, K. C. · Fadgen, W. · Palmstrom, C. J. · Schiffer, P. · Samarth, N.
Original · EN
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
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