First-principles study on competing phases of silicene: Effect of substrate and strain
Lee, Chi-Cheng · Fleurence, Antoine · Friedlein, Rainer · Yamada-Takamura, Yukiko · Ozaki, Taisuke
الأصل · EN
The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB₂(0001) surface, has been studied by first-principles calculations. A particular (√3×√3)-reconstructed structural modification was found to be stable on the ZrB₂(0001) surface under epitaxial conditions. In contrast to the planar and buckled forms of free-standing silicene, in this "planar-like" phase, all but one of the Si atoms per hexagon reside in a single plane. While without substrate, for a wide range of strain, this phase is energetically less favorable than the buckled one, it is calculated to represent the ground state on the ZrB₂(0001) surface. The atomic positions are found to be determined by the interactions with the nearest neighbor Zr atoms competing with Si-Si bonding interactions provided by the constraint of the honeycomb lattice.
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