Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

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We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition xₑff, following the empirical equation TC=1300xₑff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; xₑff>0.08) and the hole concentration is in the order of 10¹9 cm-3.