Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents
Giglberger, S. · Golub, L. E. · Bel'kov, V. V. · Danilov, S. N. · Schuh, D. · Gerl, Ch. · Rohlfing, F. · Stahl, J. · Wegscheider, W. · Weiss, D. · Prettl, W. · Ganichev, S. D.
Original · EN
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the δ-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant.
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