Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
Simmons, C. B. · Thalakulam, Madhu · Rosemeyer, B. M. · Van Bael, B. J. · Sackmann, E. K. · Savage, D. E. · Lagally, M. G. · Joynt, R. · Friesen, M. · Coppersmith, S. N. · Eriksson, M. A.
Original · EN
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.
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