Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions
Fuchs, G. D. · Katine, J. A. · Kiselev, S. I. · Mauri, D. · Wooley, K. S. · Ralph, D. C. · Buhrman, R. A.
Original · EN
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.
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