Band bending inversion in Bi₂Se₃ nanostructures
Veyrat, Louis · Iacovella, Fabrice · Dufouleur, Joseph · Nowka, Christian · Funke, Hannes · Yang, Ming · Escoffier, Walter · Goiran, Michel · Buechner, Bernd · Hampel, Silke · Giraud, Romain
Original · EN
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi₂Se₃ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from 3×10¹⁹cm⁻³ to 6×10¹⁷cm⁻³. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.