Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath

الأصل · EN

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of ²⁹Si (pSi=4.7%) is about 4 times larger than that of ¹³ C (pC=1.1%), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field (B>300 Gauss) is longer than that of nitrogen-vacancy (NV) centers in ¹³ C nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.