Observation of fractional quantum Hall effect in an InAs quantum well
Ma, Meng K. · Hossain, Md. Shafayat · Rosales, K. A. Villegas · Deng, H. · Tschirky, T. · Wegscheider, W. · Shayegan, M.
Original · EN
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density n=7.8 × 10¹¹ cm⁻² and low-temperature mobility 1.8 × 10⁶ cm²/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor ν=4/3.
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