Electrical spin injection into p-doped quantum dots through a tunnel barrier
Lombez, L. · Renucci, P. · Gallo, P. · Braun, P. F. · Carrere, H. · Binh, P. H. · Marie, X. · Amand, T. · Urbaszek, B. · Gauffier, J. L. · Camps, T. · Arnoult, A. · Fontaine, C. · Deranlot, C. · Mattana, R. · Jaffres, H. · George, J. M.
Original · EN
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
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