Atomistic simulation of light-induced changes in hydrogenated amorphous silicon
Abtew, T. A. · Drabold, D. A.
Original · EN
We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon to light exposure (Staebler-Wronski effect). We obtain improved microscopic understanding of PV operation, compute the motion of H atoms, and modes of light-induced degradation of photovoltaics. We clarify existing models of light-induced change in aSi:H and show that the Hydrogen collision model of Branz3 is correct in essentials.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.