Energy Dependent Tunneling in a Quantum Dot
MacLean, K. · Amasha, S. · Radu, Iuliana P. · Zumbuhl, D. M. · Kastner, M. A. · Hanson, M. P. · Gossard, A. C.
Original · EN
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
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