Charge Imbalance Effects on Interlayer Hopping and Fermi Surfaces in Multilayered High-Tc Cuprates

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We study doping dependence of interlayer hoppings, t⊥, in multilayered cuprates with four or more CuO₂ planes in a unit cell. When the double occupancy is forbidden in the plane, an effective amplitude of t⊥ in the Gutzwiller approximation is shown to be proportional to the square root of the product of doping rates in adjacent two planes, i.e., tᵉff⊥ ∝ t⊥ √δ₁δ₂, where δ₁ and δ₂ represent the doping rates of the two planes. More than three-layered cuprates have two kinds of planes, i.e., inner- and outer planes (IP and OP), resulting in two different values of tᵉff⊥, i.e., tᵉff⊥ 1 ∝ t⊥ √δᵢP δᵢP between IP's, and tᵉff⊥ 2 ∝ t⊥ √δᵢP δₒP between IP and OP. Fermi surfaces are calculated in the four-layered t-t'-t''-J model by the mean-field theory. The order parameters, the renormalization factor of t⊥, and the site-potential making the charge imbalance between IP and OP are self-consistently determined for several doping rates. We show the interlayer splitting of the Fermi surfaces, which may be observed in the angle resolved photoemission spectroscopy measurement.