Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots

الأصل · EN

We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures T below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization. From these effects, the hole dephasing time τϕ is extracted using the random matrix theory. While τϕ shows a T-dependence that lies between T⁻¹ and T⁻², similar to that reported for electrons, its value is found to be approximately one order of magnitude smaller.