The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions
Minohara, M. · Hikita, Y. · Bell, C. · Inoue, H. · Hosoda, M. · Sato, H. K. · Kumigashira, H. · Oshima, M. · Ikenaga, E. · Hwang, H. Y.
Original · EN
We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within 2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.
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