Evolution of spectral function in a doped Mott insulator: surface vs. bulk contributions

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We study the evolution of the spectral function with progressive hole doping in a Mott insulator, La₁₋ₓCaₓVO₃ with x = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, U/W, is shown to describe consistently the spectral evolution.