Interaction Corrections to Two-Dimensional Hole Transport in Large rₛ Limit

الأصل · EN

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large rₛ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F₀σ determined from the experiment, however, decreases with increasing rₛ for rₛ22, a behavior unexpected from existing theoretical calculations valid for small rₛ.