المساق
arXiv 2001-07-10 DOI 10.1143/JPSJ.70.2989 0 مشاهدة

Critical Behaviour near the Mott Metal-Insulator Transition in a Two-band Hubbard Model

Ohashi, Y. · Ono, Y.

الأصل · EN

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction U at the d-orbital and the charge-transfer energy Δ between the d- and p-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of U and Δ. The analytic results are in good agreement with the numerical results of the exact diagonalization method.

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