Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts

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We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor FM-n⁺-n junctions even at moderate spin selectivity of the FM-n⁺ contact when the electrons are extracted from the heavily doped n⁺-semiconductor into the ferromagnet. We derived a general equation relating spin polarization of the current to that of the electron density in nonmagnetic semiconductors. We found that the effect of the complete spin polarization is achieved near n⁺-n interface when an effective diffusion coefficient goes to zero in this region while the diffusion current remains finite.