Disordered Electrical Potential Observed on the Surface of SiO₂ by Electric Field Microscopy

الأصل · EN

The electrical potential on the surface of 300 nm thick SiO₂ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to 0.4 V within regions of 1 μm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.