Simulations of gated Si nanowires and 3-nm junctionless transistors

Original · EN

Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-based transistors are physically possible without major changes in design philosophy at scales of 1 nm wire diameter and 3 nm gate length, and that the junctionless transistor may be the only physically sensible design at these length scales. We also present investigations into atomic-level design factors such as dopant positioning and concentration.