Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe

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We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities (10¹⁵-10¹⁹ cm⁻³) at room temperature. In contrast to conventional terahertz spectroscopy studies, this enables one to directly cover the frequency range encompassing the resultant plasma frequencies. The intensity reflection spectra of the thermalized plasma, measured using sum-frequency (up-conversion) detection of the probe pulses, can be modeled well by a standard Drude model with a density-dependent momentum scattering time of approx. 200 fs at low densities, reaching approx. 20 fs for densities of approx. 10¹⁹ cm⁻³, where the increase of the scattering rate saturates. This behavior can be reproduced well with theoretical results based on the generalized Drude approach for the electron-hole scattering rate, where the saturation occurs due to phase-space restrictions as the plasma becomes degenerate. We also study the initial sub-picosecond temporal development of the Drude response, and discuss the observed rise in the scattering time in terms of initial charge-carrier relaxation, as well as the optical response of the photoexcited sample as predicted by finite-difference time-domain simulations.