Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Pradhan, Gopal K.; Bera, Achintya; Kumar, Pradeep; Muthu, D. V. S.; Sood, A. K.

doi:10.1016/j.ssc.2011.11.029

arXiv 2011-11-27 DOI 10.1016/j.ssc.2011.11.029 0 مشاهدة

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Pradhan, Gopal K. · Bera, Achintya · Kumar, Pradeep · Muthu, D. V. S. · Sood, A. K.

Materials Science Other Condensed Matter

الأصل · EN

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases.

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