Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO₃-SrTiO₃ Interfaces
Jany, R. · Breitschaft, M. · Hammerl, G. · Horsche, A. · Richter, C. · Paetel, S. · Mannhart, J. · Stucki, N. · Reyren, N. · Gariglio, S. · Zubko, P. · Caviglia, A. D. · Triscone, J. -M.
Original · EN
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO₃-SrTiO₃ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
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