المساق
arXiv 2002-06-11 DOI 10.1103/PhysRevB.67.155205 0 مشاهدة

Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2

Petrovic, C. · Kim, J. W. · Bud'ko, S. L. · Goldman, A. I. · Canfield, P. C. · Choe, W. · Miller, G. J.

الأصل · EN

A study of the anisotropy in magnetic, transport and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100K. Electrical transport along two axes is semiconducting whereas the third axis exhibits a metal - semiconductor crossover at temperature Tmin which is sensitive to current alignment and ranges between 40 and 80K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [rho(70kOe)-rho(0)]/rho(0)=2200% in the crossover temperature range

الترجمة العربية

لا توجد ترجمة عربية لهذا البحث بعد. كن أوّل من يطلبها: تستغرق ثوانيَ معدودة، وتُحفظ النتيجة لكل قارئ قادم.

تحقّق أمني

اكتب الأحرف الظاهرة أعلاه

حتى 10 ترجمات لكل شخص يومياً.