Direct observation of high temperature superconductivity in one-unit-cell FeSe films
Zhang, Wenhao · Sun, Yi · Zhang, Jinsong · Li, Fangsen · Guo, Minghua · Zhao, Yanfei · Zhang, Huimin · Peng, Junping · Xing, Ying · Wang, Huichao · Fujita, Takeshi · Hirata, Akihiko · Li, Zhi · Ding, Hao · Tang, Chenjia · Wang, Meng · Wang, Qingyan · He, Ke · Ji, Shuaihua · Chen, Xi · Wang, Junfeng · Xia, Zhengcai · Li, Liang · Wang, Yayu · Wang, Jian · Wang, Lili · Chen, Mingwei · Xue, Qi-Kun · Ma, Xucun
الأصل · EN
Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.
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