Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

Patnaik, S.; Cooley, L. D.; Gurevich, A.; Polyanskii, A. A.; Jiang, J.; Cai, X. Y.; Squitieri, A. A.; Naus, M. T.; Lee, M. K.; Choi, J. H.

doi:10.1088/0953-2048/14/6/304

arXiv 2001-04-28 DOI 10.1088/0953-2048/14/6/304 0 مشاهدة

Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

Patnaik, S. · Cooley, L. D. · Gurevich, A. · Polyanskii, A. A. · Jiang, J. · Cai, X. Y. · Squitieri, A. A. · Naus, M. T. · Lee, M. K. · Choi, J. H. · Belenky, L. · Bu, S. D. · Letteri, J. · Song, X. · Schlom, D. G. · Babcock, S. E. · Eom, C. B. · Hellstrom, E. E. · Larbalestier, D. C.

Superconductivity

الأصل · EN

An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.

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