Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime
de Visser, A. · Ponomarenko, L. A. · Galistu, G. · de Lang, D. T. N. · Pruisken, A. M. M. · Zeitler, U. · Maude, D.
Original · EN
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity ρxx near the critical filling factor νc 0.5 follows the universal scaling law ρxx(ν, T) ∝ exp[-Δν/(T/T₀)κ], where Δν=ν-νc. The critical exponent κ equals 0.56 ± 0.02, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.
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