Hooge's Constant of Carbon Nanotube Field Effect Transistors
Ishigami, Masa · Chen, J. H. · Williams, E. D. · Tobias, D. · Chen, Y. F. · Fuhrer, M. S.
Original · EN
The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.
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