Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces

Original · EN

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes i.e FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlOₓ insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current (), until a plateau of constant CIS is reached for 65 mA (CIS 60%) and above. However, such high electrical currents also lead to a large (9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near ± and this effect is here attributed to heating in the tunnel junction. One observes that the current direction for which resistance switches in FM/NM/I/FM (clockwise) is opposite to that of FM/I/FM tunnel junctions (anti-clockwise). This effect will be discussed in terms of a competition between the electromigration contributions due to the so called direct and wind forces. It will be shown that the direct force is likely to dominate electromigration in the Ta (NM) layers, while the wind contribution likely dominates in the CoFe (FM) layers.