The difference between Si and Ge(001) surfaces in the initial stages of growth
Brocks, G. · Snoeijer, J. H. · Kelly, P. J. · Zandvliet, H. J. W. · Poelsema, Bene
Original · EN
The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth. Unexpectedly, for Ge(001) these rows are found exclusively in the <310> directions, whereas on Si(001) the preferred direction is <110>. This qualitative difference between Si and Ge surfaces reflects the subtle difference in the chemistry of these two elements, which has direct consequences for epitaxial growth on these surfaces.
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