A Hybrid Al(0.10)Ga(0.90)As/AlAs Bilayer Electron System
De Poortere, E. P. · Shayegan, M.
Original · EN
We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well (QW) at the X point of the Brillouin zone (BZ), while the other is contained at the Γ point of the BZ in the alloy Al₀.₁₀Ga₀.₉₀As, grown directly below the AlAs QW. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al₀.₁₀Ga₀.₉₀As layers, measured in units of the free electron mass, are 0.46 and 0.07, while the effective electron g-factors are approximately 8.5 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two QWs, as confirmed by magnetotransport measurements.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.