The influence of base thickness on textured silicon solar cells' efficiency
Sachenko, A. V. · Kostylyov, V. P. · Bobyl, A. V. · Vlasiuk, V. N. · Sokolovskyi, I. O. · Verbitskiy, V. N. · Terukov, E. I. · Shvarts, M. Z. · Evstigneev, M.
الأصل · EN
The transformation of the long-wavelength edge of the external quantum exit (EQE) formation mechanisms in textured silicon solar cells (SCs) is revealed, depending on their thickness. Expressions for experimental EQE dependences on the long-wavelength absorption edge are obtained for a wide range of base thicknesses (100-450 μm). The expressions allow optimal SC base thickness values calculation from the condition of maximal photoconversion efficiency taking into account surface recombination velocity. In particular, it was found that optimal 100-μm base thickness corresponds to the surface recombination velocity of about 3 cm/s.
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