Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon
Kravchenko, S. V. · Shashkin, A. A. · Bloore, David A. · Klapwijk, T. M.
Original · EN
We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.