Reply to Comment (cond-mat/0311174)
Pudalov, V. M. · Gershenson, M. E. · Kojima, H. · Brunthaler, G. · Bauer, G.
Original · EN
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
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