Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states
Mikhailov, S. A.
Original · EN
We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift plasma instability, developing near the edge of the system under the microwave radiation. The proposed scheme qualitatively agrees with the microwave power, temperature, frequency, magnetic field, and mobility dependencies of the measured photosignal.
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