Does m*g* diverge at a finite electron density in silicon inversion layers?

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For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density n₀. Analysis of these magnetotransport experiments yields a product g*m* that diverges at this density (here g* is the interaction-enhanced Landé g-factor and m* is the effective mass). This claim has been disputed based on direct determinations of the g*m* obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.