Morphology control and low-temperature magnetotransport in chiral 2D perovskite R-(MBA)₂PbI₄

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Two-dimensional chiral hybrid perovskites, such as R/S-(MBA)2PbI4, are leading candidates for realizing and studying chirality-dependent charge and spin transport. However, their prohibitive in-plane resistance has precluded the electrical characterization. Here, we overcome this bottleneck by engineering the thin-film morphology of the chiral perovskite R-(MBA)₂PbI₄, enabling the first robust lateral device integration. In Hall-bar geometries, we demonstrate Hall measurements under dark conditions, unambiguously identifying p-type conduction with a Hall mobility of 0.2 cm² V⁻¹ s⁻¹ and a carrier density of 3×10¹⁴ cm⁻², parameters previously inaccessible in this class of materials. Furthermore, we observe enhanced magnetoresistance along transport paths crossing grain boundaries, highlighting the strong influence of morphology on in-plane transport. This work demonstrates in-plane magnetotransport, enabling future investigations of the fundamental mechanisms of chirality-induced spin selectivity (CISS) and accelerating the integration of chiral materials into functional spintronic devices.