Silicon intercalation into the graphene-SiC interface
Wang, F. · Shepperd, K. · Hicks, J. · Nevius, M. S. · Tinkey, H. · Tejeda, A. · Taleb-Ibrahimi, A. · Bertran, F. · F`evre, P. Le · Torrance, D. B. · First, P. · de Heer, W. A. · Zakharov, A. A. · Conrad, E. H.
Original · EN
In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate 6 ML of Si into the graphene-SiC interface.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.